IndiumV3, Main, Repository, bibRecord, 001A24

In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide

Identifieur interne : 001A24 ( Main/Repository ); précédent : 001A23; suivant : 001A25

In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide

Auteurs : RBID : Pascal:13-0039765

Descripteurs français

Pascal (Inist)
- Déformation, Transition fragile ductile, Transition ductile fragile, Semiconducteur III-V, Antimoniure d'indium, Composé III-V, Germination dislocation, Structure à pilier, Technologie faisceau ion focalisé, Microscopie électronique balayage, Glissement, Relation contrainte déformation, Microscopie électronique transmission, Microstructure, Dislocation, Plasticité, Surface libre, Effet dimensionnel, 6172L, 8140L.

English descriptors

KwdEn :
- Brittle-ductile transitions, Deformation, Dislocation, Dislocation nucleation, Ductile brittle transition, Focused ion beam technology, Free surface, III-V compound, III-V semiconductors, Indium antimonides, Microstructure, Pillared structure, Plasticity, Scanning electron microscopy, Size effect, Slip, Stress strain relation, Transmission electron microscopy.

Abstract

At ambient temperature and pressure, most of the semiconductor materials are brittle: this is the case of the III-V compound semiconductor indium antimonide, InSb. To study the role of dislocation nucleation at the onset of brittle-to-ductile transition, InSb micro-pillars have been fabricated by focused ion beam and in situ compressed at room temperature in a scanning electron microscope, in order to correlate the observation of slip traces at the pillar surface and features of the stress-strain curve. Transmission electron microscopy (TEM) thin foils have been cut out of the pillars to study the deformation microstructure. The TEM study of dislocations and the observation of slip traces at surfaces show that increasing the surface-to-volume ratio of the pillars modifies the dislocation nucleation conditions and favors plasticity even at room temperature. The role of dislocation nucleation from free surfaces is thus discussed within the larger context of the micro-pillar compression technique and extrinsic size effects.

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Pascal:13-0039765

Le document en format XML

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<term>Focused ion beam technology</term>
<term>Free surface</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium antimonides</term>
<term>Microstructure</term>
<term>Pillared structure</term>
<term>Plasticity</term>
<term>Scanning electron microscopy</term>
<term>Size effect</term>
<term>Slip</term>
<term>Stress strain relation</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Déformation</term>
<term>Transition fragile ductile</term>
<term>Transition ductile fragile</term>
<term>Semiconducteur III-V</term>
<term>Antimoniure d'indium</term>
<term>Composé III-V</term>
<term>Germination dislocation</term>
<term>Structure à pilier</term>
<term>Technologie faisceau ion focalisé</term>
<term>Microscopie électronique balayage</term>
<term>Glissement</term>
<term>Relation contrainte déformation</term>
<term>Microscopie électronique transmission</term>
<term>Microstructure</term>
<term>Dislocation</term>
<term>Plasticité</term>
<term>Surface libre</term>
<term>Effet dimensionnel</term>
<term>6172L</term>
<term>8140L</term>
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<front><div type="abstract" xml:lang="en">At ambient temperature and pressure, most of the semiconductor materials are brittle: this is the case of the III-V compound semiconductor indium antimonide, InSb. To study the role of dislocation nucleation at the onset of brittle-to-ductile transition, InSb micro-pillars have been fabricated by focused ion beam and in situ compressed at room temperature in a scanning electron microscope, in order to correlate the observation of slip traces at the pillar surface and features of the stress-strain curve. Transmission electron microscopy (TEM) thin foils have been cut out of the pillars to study the deformation microstructure. The TEM study of dislocations and the observation of slip traces at surfaces show that increasing the surface-to-volume ratio of the pillars modifies the dislocation nucleation conditions and favors plasticity even at room temperature. The role of dislocation nucleation from free surfaces is thus discussed within the larger context of the micro-pillar compression technique and extrinsic size effects.</div>
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<fC01 i1="01" l="ENG"><s0>At ambient temperature and pressure, most of the semiconductor materials are brittle: this is the case of the III-V compound semiconductor indium antimonide, InSb. To study the role of dislocation nucleation at the onset of brittle-to-ductile transition, InSb micro-pillars have been fabricated by focused ion beam and in situ compressed at room temperature in a scanning electron microscope, in order to correlate the observation of slip traces at the pillar surface and features of the stress-strain curve. Transmission electron microscopy (TEM) thin foils have been cut out of the pillars to study the deformation microstructure. The TEM study of dislocations and the observation of slip traces at surfaces show that increasing the surface-to-volume ratio of the pillars modifies the dislocation nucleation conditions and favors plasticity even at room temperature. The role of dislocation nucleation from free surfaces is thus discussed within the larger context of the micro-pillar compression technique and extrinsic size effects.</s0>
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<s5>07</s5>
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<s5>07</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
</fC03>
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<s5>11</s5>
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<s5>11</s5>
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<s5>14</s5>
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<s5>29</s5>
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<fC03 i1="16" i2="X" l="FRE"><s0>Plasticité</s0>
<s5>30</s5>
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<s3>Lanzarote, Canary Islands ESP</s3>
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In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide

In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: the case of indium antimonide

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Abstract

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